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The BYG23M R3G is a single-element silicon rectifier diode manufactured by Taiwan Semiconductor. It features a maximum average forward rectified current of 1.5 A and a repetitive peak reverse voltage rating of 1000 V. The device utilizes the DO-214AC (SMA) surface-mount package. Key electrical characteristics include a maximum non-repetitive peak surge forward current of 30 A, a maximum reverse leakage current of 5 uA, and a typical recovery time of 65 ns. The component is qualified to AEC-Q101 standards for automotive applications.
Verify the specific suffix 'R3G' against the manufacturer's latest datasheet to confirm packaging details and compliance status. Confirm AEC-Q101 qualification requirements if deploying in automotive environments. Cross-reference the part number with official distributor catalogs to ensure availability and correct ordering specifications.
Select this component when a 1000 V blocking capability is required in a compact SMA package. The 1.5 A current rating suits moderate power applications. Ensure the circuit design accommodates the 30 A surge current limit during transient events. Verify thermal management requirements for the specified operating temperature range.
This device belongs to the BYG series of high-efficiency recovery rectifiers from Taiwan Semiconductor. It is designed for general-purpose rectification in both industrial and automotive electronics. The DO-214AC package allows for automated surface-mount assembly, facilitating efficient PCB integration.
Direct substitutes must match the 1.5 A current, 1000 V voltage, and DO-214AC package. Verify equivalent recovery times and AEC-Q101 certification before substitution.