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The BYM11-400HE3_A/H is a single silicon switching diode from Vishay General Semiconductor, designed for surface-mount applications in the DO-213AB (SMB) package. It features a maximum repetitive peak reverse voltage of 400 V and an average forward rectified current of 1 A. The device exhibits a typical reverse leakage current of 5 µA at rated voltage and a peak non-repetitive forward surge current capability of 30 A. Operating characteristics include a junction temperature range of -65°C to +175°C and a specified peak reverse recovery time of 150 ns.
Verify the specific suffix against official Vishay documentation to confirm exact electrical tolerances and packaging configurations. Ensure that the DO-213AB footprint matches the target PCB design constraints. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before finalizing procurement specifications.
Select this component when high-temperature stability and fast recovery are required in a compact surface-mount form factor. The 400 V rating provides sufficient margin for standard industrial and automotive bus voltages. Consider the 1 A continuous current limit and thermal management requirements for the SMB package during circuit layout planning.
This part belongs to the BYM11 series of glass-passivated fast recovery rectifiers manufactured by Vishay. The series utilizes advanced processing techniques to achieve low forward voltage drop and consistent reverse recovery characteristics. It serves as a robust solution for replacing bulkier axial-leaded components in modern high-density electronic assemblies.
Direct substitutes within the same family include BYM11-1000HE3_A/H for higher voltage ratings or BYM11-xxx variants with different voltage codes. Verify pinout compatibility and ensure that alternative parts meet the same 175°C junction temperature requirement.