BYM12-200HE3_B/H

Overview

The BYM12-200HE3_B/H is a surface-mount switching diode from the Vishay BYM12-xxx series, housed in a DO-213AB (SMB) package. It features a peak reverse repetitive voltage of 200 V and a maximum continuous forward current of 1 A. The device exhibits a peak reverse recovery time of 50 ns and a low peak reverse leakage current of 5 μA. It operates within a junction temperature range of -65°C to 175°C and supports a peak non-repetitive forward surge current of 30 A.

Feature Summary

• Utilizes Super Barrier Rectifier technology for high reliability and fast switching efficiency.
• Features a cavity-free glass-passivated junction structure.
• Designed for low leakage current and high forward surge capability.

Applications

• High frequency DC/DC converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diodes
• Reverse battery protection

Procurement Notes

Verify the specific suffix B/H against official datasheets to confirm tape-and-reel packaging and RoHS compliance status. Ensure the component matches the required SMB footprint and electrical ratings for the target circuit design before procurement.

Selection Notes

Select this component for applications requiring fast recovery characteristics and low reverse leakage in a compact surface-mount form factor. Confirm that the 200 V rating and 1 A current capacity align with the system's voltage and load requirements.

Part Context

This part belongs to the BYM12-xxx series of Super Barrier Rectifiers manufactured by Vishay General Semiconductor. These devices combine the advantages of Schottky diodes with the ruggedness of standard silicon rectifiers, offering improved performance over traditional switching diodes in high-frequency applications.

Replacement Considerations

Check for direct substitutes such as the BYM12-200-E3/96 or BYM12-200-E3/54, ensuring identical electrical parameters and package compatibility are maintained during substitution.