BYM13-50HE3_A/I

BYM13-50HE3_A/I

  • Description:DIODE SCHOTTKY 50V 1A DO213AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)

SKU:4b1b9f248f87 Category: Brand:

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Product Detailed Parameters

  • Description:DIODE SCHOTTKY 50V 1A DO213AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):50 V
  • Current - Average Rectified (Io):1A
  • Voltage - Forward (Vf) (Max) @ If:700 mV @ 1 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:500 µA @ 50 V
  • Capacitance @ Vr, F:80pF @ 4V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:DO-213AB, MELF
  • Supplier Device Package:DO-213AB (MELF)
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Grade:Automotive
  • Qualification:AEC-Q101

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BYM13-50HE3_A/I

Overview

The BYM13-50HE3_A/I is a silicon Schottky rectifier from Vishay General Semiconductor, designed for surface-mount applications in the DO-213AB (MELF) package. It features a single diode configuration with a repetitive peak reverse voltage of 50 V and an average forward current rating of 1 A. The device exhibits a maximum forward voltage drop of 700 mV at rated current and supports a non-repetitive peak forward surge current of 30 A. Operating characteristics include a maximum reverse leakage current of 500 µA and a junction temperature range spanning from -55 °C to +150 °C.

Feature Summary

  • Utilizes Schottky barrier technology to achieve low forward voltage drop and minimize power loss during conduction.
  • Features a glass-passivated junction structure that ensures high reliability and stability under various environmental conditions.
  • Constructed with a cavity-free encapsulation design to enhance mechanical robustness and protect against physical stress.

Applications

  • High-frequency switching power supplies
  • Free-wheeling rectification in DC-DC converters
  • Polarity protection circuits

Procurement Notes

Verify the specific suffix 'A/I' against official Vishay documentation to confirm exact marking codes and tape-and-reel specifications. Ensure compatibility with standard MELF handling procedures. Cross-reference datasheet revisions to confirm compliance with current RoHS directives and material declarations before finalizing procurement orders.

Selection Notes

Select this component when a compact surface-mount Schottky rectifier is required for low-voltage, moderate-current applications. The 50 V rating suits systems operating below this threshold, while the 1 A current capacity supports typical signal or low-power rectification needs. Consider the thermal management requirements associated with the small MELF footprint for high-density designs.

Part Context

This part belongs to the BYM13 series of Schottky rectifiers, which are characterized by their small outline MELF package. The series offers alternatives to larger through-hole devices, enabling miniaturization in modern electronic assemblies. Vishay utilizes advanced semiconductor processes to ensure consistent performance across the product line.

Replacement Considerations

Direct replacements must match the 1 A current, 50 V voltage, and DO-213AB package dimensions. Verify that substitute Schottky diodes maintain comparable forward voltage and reverse leakage specifications to ensure circuit performance parity.

BYM13-50HE3_A/IBYM13-50HE3_A/I

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