SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BYM13-50HE3_A/I is a silicon Schottky rectifier from Vishay General Semiconductor, designed for surface-mount applications in the DO-213AB (MELF) package. It features a single diode configuration with a repetitive peak reverse voltage of 50 V and an average forward current rating of 1 A. The device exhibits a maximum forward voltage drop of 700 mV at rated current and supports a non-repetitive peak forward surge current of 30 A. Operating characteristics include a maximum reverse leakage current of 500 µA and a junction temperature range spanning from -55 °C to +150 °C.
Verify the specific suffix 'A/I' against official Vishay documentation to confirm exact marking codes and tape-and-reel specifications. Ensure compatibility with standard MELF handling procedures. Cross-reference datasheet revisions to confirm compliance with current RoHS directives and material declarations before finalizing procurement orders.
Select this component when a compact surface-mount Schottky rectifier is required for low-voltage, moderate-current applications. The 50 V rating suits systems operating below this threshold, while the 1 A current capacity supports typical signal or low-power rectification needs. Consider the thermal management requirements associated with the small MELF footprint for high-density designs.
This part belongs to the BYM13 series of Schottky rectifiers, which are characterized by their small outline MELF package. The series offers alternatives to larger through-hole devices, enabling miniaturization in modern electronic assemblies. Vishay utilizes advanced semiconductor processes to ensure consistent performance across the product line.
Direct replacements must match the 1 A current, 50 V voltage, and DO-213AB package dimensions. Verify that substitute Schottky diodes maintain comparable forward voltage and reverse leakage specifications to ensure circuit performance parity.