BYT51M-TAP

BYT51M-TAP

$0.20
  • Description:DIODE AVALANCHE 1KV 1.5A SOD57
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Box (TB)

SKU:ee48287a4092 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:DIODE AVALANCHE 1KV 1.5A SOD57
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Box (TB)
  • Technology:Avalanche
  • Voltage - DC Reverse (Vr) (Max):1000 V
  • Current - Average Rectified (Io):1.5A
  • Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):4 µs
  • Current - Reverse Leakage @ Vr:1 µA @ 1000 V
  • Capacitance @ Vr, F:-
  • Mounting Type:Through Hole
  • Package / Case:SOD-57, Axial
  • Supplier Device Package:SOD-57
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Grade:-
  • Qualification:-

Download product information

BYT51M-TAP

Overview

The BYT51M-TAP is a standard avalanche sinterglass diode manufactured by Vishay General Semiconductor - Diodes Division. It features a glass passivated junction and a hermetically sealed SOD-57 package with plated axial leads. The device is rated for a repetitive peak reverse voltage of 1000 V and an average forward current of 1.5 A at a lead length of 10 mm. It supports a peak forward surge current of 50 A and operates within a junction temperature range of -55 °C to +175 °C.

Feature Summary

  • Hermetically sealed package with glass passivated junction
  • AEC-Q101 qualified for automotive reliability
  • Low reverse current characteristics
  • Standard avalanche capability

Applications

  • Rectification diode applications

Procurement Notes

Verify the specific ordering code BYT51M-TAP against the manufacturer's documentation to confirm packaging details, as suffixes define tape and reel versus ammopack configurations. Ensure compliance with material categorization definitions provided in the datasheet. Confirm that the component meets the required environmental specifications for the intended operating conditions before finalizing procurement.

Selection Notes

Select this component when a high-voltage rectifier with a maximum repetitive peak reverse voltage of 1000 V is required. Consider the SOD-57 axial package for through-hole mounting requirements. Evaluate thermal resistance parameters based on the specific lead length or printed circuit board spacing used in the design to ensure adequate heat dissipation under continuous operation.

Part Context

This part belongs to the BYT51 series of standard avalanche sinterglass diodes from Vishay Semiconductors. The series includes variants differentiated by reverse voltage ratings ranging from 50 V to 800 V, while maintaining a consistent average forward current rating of 1.5 A. All models share the same SOD-57 package and hermetic construction.

Replacement Considerations

Direct substitutes include other BYT51 series variants such as BYT51K (800 V) if lower voltage ratings are acceptable. Cross-brand replacements must match the 1000 V reverse voltage, 1.5 A average forward current, and SOD-57 axial package dimensions.

FAQ

What is the maximum non-repetitive reverse avalanche energy?

The maximum non-repetitive reverse avalanche energy is 20 mJ when tested at a reverse current of 1 A.

How does the average forward current rating change based on mounting?

The average forward current is rated at 1.5 A with a lead length of 10 mm, but decreases to 1 A when mounted directly on a printed circuit board.

BYT51M-TAPBYT51M-TAP
$0.20
Buy Now