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The BYT52K-TR is an avalanche rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. It features a maximum DC reverse voltage of 800 V and an average forward current rating of 1.4 A. The device utilizes SOD-57 axial through-hole packaging. Key electrical characteristics include a maximum forward voltage of 1.3 V at 1 A and a reverse leakage current of 5 µA at 800 V. The component supports a junction operating temperature range from -55°C to 175°C and exhibits a reverse recovery time of 200 ns.
Verify the specific suffix K against official Vishay documentation to confirm exact parameter tolerances and manufacturing lot details. Confirm RoHS3 compliance status directly with the manufacturer datasheet prior to integration. Ensure the SOD-57 axial package dimensions match the target PCB layout requirements. Validate that the 800 V reverse voltage rating aligns with the circuit's peak inverse voltage demands.
Select this component when an 800 V blocking capability is required alongside a 1.4 A continuous current rating. The SOD-57 package is appropriate for designs utilizing through-hole assembly processes. Consider the 200 ns reverse recovery time for frequency constraints. Verify thermal management capabilities given the 175°C maximum junction temperature limit.
This part belongs to the BYT52 series of avalanche rectifiers produced by Vishay. The series typically offers various voltage ratings within the same physical footprint family. The BYT52K-TR specifically denotes the 800 V variant packaged in tape and reel format for automated assembly processes.
BYT52K-TAP is identified as a parametric equivalent substitute available from the same manufacturer.