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The BYT52M-TAP is a fast avalanche sinterglass diode manufactured by Vishay Semiconductors. It features a maximum repetitive peak reverse voltage of 1000 V and an average forward current rating of 1.4 A at 25 °C with 10 mm leads. The device exhibits a maximum forward voltage of 1.3 V at 1 A, a maximum reverse current of 5 µA at rated voltage, and a maximum reverse recovery time of 200 ns. It supports a non-repetitive reverse avalanche energy of 10 mJ and operates within a junction temperature range of -55 °C to +175 °C.
Verify the specific ordering code BYT52M-TAP against the manufacturer's documentation to confirm the ammopack packaging format. Ensure that the required minimum order quantity aligns with your procurement planning. Cross-reference the electrical specifications in the datasheet to validate suitability for your target operating conditions before finalizing the purchase.
Select this component when a 1000 V reverse voltage rating is required alongside fast recovery performance. Consider the thermal resistance values provided for different lead lengths and mounting positions to ensure adequate heat dissipation. Verify that the soft recovery characteristics meet the electromagnetic interference requirements of the specific circuit design.
This part belongs to the BYT52 series of fast avalanche sinterglass diodes from Vishay Semiconductors. The series includes variants with different reverse voltage ratings ranging from 50 V to 800 V. All members share the same SOD-57 axial package and general feature set, differentiated primarily by their breakdown voltage capabilities.
Substitute parts must match the 1000 V reverse voltage, 1.4 A average forward current, and SOD-57 package dimensions. Verify that alternative components offer comparable reverse recovery times and avalanche energy ratings to maintain circuit performance.