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The BYT52M-TR is a fast avalanche sinterglass diode manufactured by Vishay General Semiconductor - Diodes Division. It features a maximum repetitive peak reverse voltage of 1000 V and an average forward current rating of 1.4 A. The device utilizes a glass passivated junction within a hermetically sealed SOD-57 axial package. Electrical characteristics include a maximum forward voltage of 1.3 V at 1 A, a maximum reverse current of 5 µA at rated voltage, and a reverse recovery time of 200 ns. Non-repetitive reverse avalanche energy is rated at 10 mJ.
Verify the specific ordering code matches the required packaging format, such as tape and reel or ammopack configurations. Confirm that the component meets RoHS3 compliance standards and material categorization requirements before finalizing procurement. Ensure the selected variant aligns with the necessary voltage and current ratings for the intended circuit design.
Select this component when a high-voltage capability of 1000 V is required alongside fast switching performance. The SOD-57 axial package is suitable for through-hole mounting where space constraints allow. Consider the thermal resistance characteristics and lead length dependencies when designing the PCB layout for optimal heat dissipation.
This part belongs to the BYT52 series of fast avalanche sinterglass diodes from Vishay Semiconductors. The series includes variants differentiated primarily by their reverse voltage ratings, ranging from 50 V to 1000 V. All models share identical physical packages and general electrical characteristics, with the BYT52M representing the highest voltage option in the lineup.
Direct substitutes within the same family include BYT52K-TR (800 V) and BYT52J-TR (600 V), provided the system voltage allows for derating. Verify that any replacement maintains the required 1.4 A average forward current and 200 ns reverse recovery time specifications.