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The BYT53G-TAP is an ultra-fast avalanche sinterglass diode manufactured by Vishay Semiconductors. It features a glass passivated junction and a hermetically sealed SOD-57 axial leaded package. The device supports a maximum repetitive peak reverse voltage of 400 V and an average forward current of 1.9 A. Key electrical characteristics include a maximum reverse recovery time of 50 ns, a typical forward voltage of 1.1 V at 1 A, and a low reverse leakage current of 5 µA at rated voltage. It operates within a junction temperature range of -55 °C to +175 °C.
Verify the specific ordering code BYT53G-TAP against the datasheet to confirm the ammpack packaging format. Ensure the required minimum order quantity aligns with the manufacturer's standard packing specifications. Confirm that the 400 V rating matches the circuit requirements before finalizing procurement.
Select this component when high-speed switching and avalanche ruggedness are required in a through-hole package. The 400 V rating distinguishes it from lower voltage variants like the BYT53B or BYT53C. Consider the thermal resistance limits and derating curves for ambient temperatures exceeding 25 °C during design validation.
This part belongs to the BYT53 series of ultra-fast avalanche sinterglass diodes. The series includes multiple voltage ratings (50 V to 300 V) sharing the same SOD-57 package and general electrical profile. The 'G' suffix specifically denotes the 400 V breakdown voltage variant within this family.
Direct substitutes must match the 400 V reverse voltage, 1.9 A average current, and 50 ns reverse recovery time. Verify compatibility with the SOD-57 axial leaded package and ensure the replacement device also supports avalanche energy ratings if transient protection is required.