SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BYT53G-TR is an ultra-fast avalanche sinterglass diode manufactured by Vishay Semiconductors. It features a glass passivated junction and hermetically sealed SOD-57 package with plated axial leads. The device supports a repetitive peak reverse voltage of 400 V and an average forward current of 1.9 A. Key electrical parameters include a maximum forward voltage of 1.1 V at 1 A, a reverse recovery time of 50 ns, and a peak forward surge current rating of 50 A.
Verify the specific ordering code matches the required suffix (e.g., -TR for tape and reel or -TAP for ammopack). Confirm that the 400 V reverse voltage rating aligns with the circuit requirements. Ensure compliance with RoHS directives if applicable to the manufacturing process. Validate thermal resistance values against the specific lead length and mounting conditions used in the design.
Select this component when a 400 V blocking capability is required alongside ultra-fast recovery speeds. The SOD-57 through-hole package suits designs needing robust mechanical anchoring. Consider the 50 ns reverse recovery time for high-frequency operation. Evaluate the non-repetitive avalanche energy rating if transient overvoltage protection is necessary within the circuit topology.
This part belongs to the BYT53 series of ultra-fast avalanche sinterglass diodes from Vishay. The series includes variants differentiated primarily by their repetitive peak reverse voltage ratings, ranging from 50 V to 400 V. All models share identical physical dimensions, thermal characteristics, and current handling capabilities, allowing for pin-compatible design flexibility across different voltage levels.
Direct substitutes within the same family include BYT53A, BYT53B, BYT53C, BYT53D, and BYT53F. These alternatives offer lower reverse voltage ratings while maintaining the same 1.9 A average forward current and 50 ns recovery time specifications.