SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BYT56M-TAP is a fast avalanche sinterglass diode manufactured by Vishay Semiconductors. It features a repetitive peak reverse voltage of 1000 V and an average forward current rating of 3 A at 25 °C with a 10 mm lead length. The device exhibits a maximum forward voltage of 1.4 V at 3 A and a reverse recovery time of 100 ns. Non-repetitive reverse avalanche energy capability is rated at 10 mJ. Operating junction and storage temperatures range from -55 °C to +175 °C.
Verify the specific ordering code BYT56M-TAP corresponds to the 2500-unit ammopack configuration as documented in the manufacturer's ordering information. Confirm that the SOD-64 package dimensions and terminal plating specifications meet the mechanical requirements of the target assembly process before finalizing procurement.
Select this component when a 1000 V blocking capability is required alongside a 3 A continuous current rating. The 100 ns reverse recovery time makes it appropriate for faster switching frequencies compared to standard recovery diodes. Ensure thermal management accounts for the specified thermal resistance values under the intended mounting conditions.
This part belongs to the BYT56 series of fast avalanche sinterglass diodes, which includes variants with different reverse voltage ratings ranging from 50 V to 800 V. All members of the series share the same SOD-64 axial leaded package and identical current and thermal characteristics, differing only in their breakdown voltage specifications.
Other models within the BYT56 series (BYT56A through BYT56K) are mechanically interchangeable but offer lower reverse voltage ratings. Verify that the system voltage does not exceed the 1000 V rating of the BYT56M variant if substituting with other series members.