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Product Detailed Parameters
- Description：DIODE AVALANCHE 1000V 3A SOD64
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：Avalanche
- Voltage - DC Reverse (Vr) (Max)：1000 V
- Current - Average Rectified (Io)：3A
- Voltage - Forward (Vf) (Max) @ If：1.4 V @ 3 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：100 ns
- Current - Reverse Leakage @ Vr：5 µA @ 1000 V
- Capacitance @ Vr, F：-
- Mounting Type：Through Hole
- Package / Case：SOD-64, Axial
- Supplier Device Package：SOD-64
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The BYT56M-TR is a fast avalanche sinterglass diode manufactured by Vishay Semiconductors. It features a glass passivated junction and hermetically sealed SOD-64 package. Key electrical parameters include a repetitive peak reverse voltage of 1000 V, an average forward current of 3 A at 25 °C with 10 mm leads, and a maximum forward surge current of 80 A. The device exhibits a typical reverse recovery time of 100 ns and a maximum forward voltage of 1.4 V at 3 A. Operating temperature range spans from -55 °C to +175 °C.
Feature Summary
- Fast avalanche capability for high-voltage switching applications
- Glass passivated junction with hermetically sealed package
- Soft recovery characteristics to minimize switching noise
- Low reverse leakage current across operating temperatures
Applications
- Very fast rectification circuits
- High-speed switching diode implementations
- Avalanche energy dissipation in inductive loads
Procurement Notes
Verify the specific ordering code BYT56M-TR against the datasheet to confirm the 1000 V rating and SOD-64 package. Confirm minimum order quantities match the specified tape and reel units. Ensure compliance requirements are met as defined in the material categorization documentation provided by the manufacturer.
Selection Notes
Select this component when a 1000 V blocking capability is required alongside fast recovery performance. The SOD-64 through-hole package suits designs needing robust mechanical mounting. Consider the 80 A surge rating for inductive switching environments. Verify thermal resistance constraints based on lead length and PCB spacing for the specific application.
Part Context
This part belongs to the BYT56 series of fast avalanche sinterglass diodes from Vishay Semiconductors. The series includes variants with different reverse voltage ratings (50 V to 800 V) sharing the same SOD-64 package and general electrical structure. The 'M' suffix specifically denotes the 1000 V breakdown voltage variant within this family.
Replacement Considerations
Direct substitutes within the same Vishay series include BYT56K (800 V) or BYT56J (600 V) if lower voltage ratings are acceptable. Cross-manufacturer replacements must match the 1000 V reverse voltage, 3 A forward current, and SOD-64 package dimensions.
FAQ
What is the maximum non-repetitive reverse avalanche energy?
The maximum non-repetitive reverse avalanche energy is 10 mJ when tested at a reverse current of 0.4 A.
How does the average forward current change when mounted on a PC board?
When mounted on a PC board, the average forward current rating decreases to 1.5 A, compared to 3 A with 10 mm lead length.
What is the typical reverse recovery time for this diode?
The typical reverse recovery time is 100 ns, measured under conditions of IF = 0.5 A, IR = 1 A, and iR = 0.25 A.
