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The BYT62-TR is a standard avalanche sinterglass diode manufactured by Vishay Semiconductors. It features a glass passivated junction and a hermetically sealed SOD-57 package with plated axial leads. The device provides a repetitive peak reverse voltage of 2400 V and an average forward current rating of 350 mA. Key electrical characteristics include a maximum reverse recovery time of 5000 ns, a maximum non-repetitive reverse avalanche energy of 60 mJ, and a maximum junction temperature of 175 °C.
Verify the specific ordering code to confirm the tape and reel packaging format associated with the -TR suffix. Ensure that the required minimum order quantity aligns with the manufacturer's specified units per reel. Confirm compliance requirements and material categorization details directly from the official datasheet before finalizing procurement specifications.
Select this component for high-voltage applications requiring controlled avalanche behavior and low reverse leakage current. The SOD-57 through-hole package facilitates manual or automated insertion. Verify thermal resistance constraints and ensure the operating junction temperature remains within the specified limits during design validation.
This part belongs to the BYT62 series of standard avalanche sinterglass diodes produced by Vishay General Semiconductor - Diodes Division. The series is designed for general-purpose high-voltage rectification where robustness against inductive switching transients is required. The -TR suffix specifically denotes the tape and reel packaging configuration.
Cross-reference with other BYT62 variants such as BYT62-TAP for alternative packaging options. Verify pinout compatibility and electrical parameter equivalence when substituting with components from other manufacturers offering similar high-voltage sinterglass diodes.