SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BYV26E-TR is an ultra-fast avalanche sinterglass diode from Vishay Semiconductors, designed for high-voltage switching applications. It features a repetitive peak reverse voltage of 1000 V and an average forward current rating of 1 A. The device exhibits a maximum reverse recovery time of 75 ns and a peak forward surge current capability of 30 A. Packaged in the SOD-57 through-hole format with plated axial leads, it supports a junction temperature range from -55 °C to +175 °C.
Verify the specific ordering code matches the required packaging configuration. The BYV26E-TR designation indicates availability on a 10-inch tape and reel. Confirm that the 1000 V reverse voltage rating aligns with the circuit requirements. Ensure the SOD-57 through-hole mounting style fits the board layout constraints before finalizing procurement.
Select this component when a 1000 V blocking voltage is necessary alongside fast recovery characteristics. The 75 ns reverse recovery time distinguishes it from lower-voltage variants in the series which may offer faster speeds but lower voltage ratings. Consider the thermal resistance and derating curves if operating near the maximum junction temperature limits.
This part belongs to the BYV26x series of ultra-fast avalanche sinterglass diodes manufactured by Vishay Semiconductors. The series includes variants with different reverse voltage ratings, such as the BYV26A (200 V), BYV26B (400 V), BYV26C (600 V), and BYV26D (800 V). All share the same SOD-57 package and general electrical architecture.
Direct substitutes within the same family include BYV26A-TR, BYV26B-TR, BYV26C-TR, and BYV26D-TR, provided the system voltage requirements are compatible with their respective lower reverse voltage ratings.