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The BYV29B-300-E3/81 is a silicon rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. It features a maximum repetitive peak reverse voltage of 300 V and an average forward rectified current rating of 5 A. The device utilizes a DO-201AD plastic package with matte tin-plated leads for solderability. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 200 A, a typical reverse recovery time of 200 ns, and a maximum DC reverse leakage current of 10 µA at 600 V. The component operates within a junction temperature range of -65°C to 175°C.
Verify the specific suffix /81 against official Vishay documentation to confirm tape-and-reel packaging specifications. Ensure the part number matches the exact voltage and current ratings required for the target circuit design. Cross-reference the RoHS compliance status and lead plating details with the latest datasheet to guarantee material compatibility with assembly processes.
Select this component when a 300 V blocking voltage and 5 A continuous current capacity are required in a standard axial package. Consider the 200 ns reverse recovery time for switching frequency limitations. Evaluate thermal management requirements based on the 1.35 V forward voltage drop at full load. Compare against alternative fast recovery diodes if lower capacitance or faster switching speeds are necessary for the specific application topology.
This diode belongs to the BYV29 series of soft recovery fast-switching plastic rectifiers from Vishay. The series is designed for general-purpose rectification where low forward voltage and controlled reverse recovery are beneficial. The DO-201AD package provides a reliable mechanical solution for through-hole mounting in various electronic assemblies.
Public confirmed substitute part numbers: None identified in available data.