Diode Arrays BYV410-600PQ product image

BYV410-600PQ

$0.33
  • Description:DIODE ARRAY GP 600V 20A TO-220E
  • Series:-

SKU:de751a393f18 Category: Brand:

  
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BYV410-600PQ is listed in the Diode Arrays range at ChipApex. The manufacturer field lists WeEn Semiconductors. Its product description is DIODE ARRAY GP 600V 20A TO-220E. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for BYV410-600PQ

  • Description:DIODE ARRAY GP 600V 20A TO-220E
  • Series:-
  • Mfr:WeEn Semiconductors
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):600 V
  • Current - Average Rectified (Io) (per Diode):20A
  • Voltage - Forward (Vf) (Max) @ If:1.7 V @ 10 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):55 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 600 V
  • Operating Temperature - Junction:175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220E
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for BYV410-600PQ

BYV410-600PQ

Diode Arrays Overview

The BYV410-600PQ is a dual ultrafast power diode manufactured by WeEn Semiconductors, housed in a TO220 plastic package. It features two integrated diodes with a maximum repetitive peak reverse voltage of 600 V and an average forward current rating of 10 A. The device exhibits a low forward voltage drop of 1 V and a fast reverse recovery time of 40 ns. It supports a surge forward current of 120 A and operates at junction temperatures up to 175 °C.

Diode Arrays Feature Summary

  • Dual ultrafast power diode configuration within a single TO220 plastic package
  • High thermal durability with a maximum junction temperature rating of 175 °C
  • Fast switching performance characterized by a 40 ns reverse recovery time
  • Robust surge current handling capability for transient protection

Diode Arrays Applications

  • High-frequency DC-DC converters
  • Free-wheeling rectification in power supplies
  • Snubber circuits in switching applications

Diode Arrays Procurement Notes

Verify the specific ordering part number BYV410-600PQ against the manufacturer's official documentation to ensure correct package type and electrical specifications. Confirm RoHS compliance and lead-free status as indicated in the product data sheet. Check the current product status for volume production availability before finalizing procurement plans.

Diode Arrays Selection Notes

Select this component for designs requiring high-speed rectification with moderate current capacity. The dual-diode arrangement simplifies circuit layout compared to discrete solutions. Ensure the operating environment does not exceed the 175 °C junction temperature limit. Verify that the 600 V reverse voltage rating provides sufficient margin for the application's peak inverse voltage requirements.

Diode Arrays Part Context

This component belongs to the ultrafast rectifier category offered by WeEn Semiconductors. It is designed for power integration applications where efficiency and speed are critical. The product line includes various silicon power diodes tailored for industrial and consumer electronics, emphasizing safety, reliability, and high-temperature durability.

Diode Arrays Replacement Considerations

Consult official cross-reference lists from WeEn Semiconductors or authorized distributors for verified substitute part numbers. Do not assume functional equivalence based solely on package similarity. Verify that any replacement matches the exact electrical parameters, including reverse recovery time and forward voltage characteristics.

BYV410-600PQBYV410-600PQ
$0.33
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