SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BYW29-200H is a silicon rectifier diode from ON Semiconductor, designed for high-efficiency switching applications. It features an 8A average forward current rating and a 200V maximum repetitive peak reverse voltage. The device utilizes a glass-passivated chip junction to ensure reliability and low leakage current. Key electrical characteristics include a maximum forward voltage drop of 1.3V at rated current and a peak non-repetitive forward surge current capability of 100A. The component is housed in a TO-220AC package with two pins, suitable for through-hole mounting.
Verify the specific suffix 'H' against the manufacturer's official datasheet to confirm if it denotes a specific tape-and-reel packaging variant or a distinct electrical parameter deviation compared to the standard BYW29-200G. Ensure the ordering part number matches the required package style and terminal finish specifications for your assembly process.
Select this component for designs requiring robust 8A continuous current handling with fast recovery characteristics. The 200V rating provides adequate headroom for common AC line voltages. Consider the thermal management requirements associated with the TO-220AC package when designing the PCB layout for heat dissipation.
The BYW29 series represents a family of ultrafast general-purpose rectifier diodes manufactured by ON Semiconductor (formerly General Semiconductor). These devices are engineered for high efficiency in switched-mode power supplies. The BYW29-200H specifically falls within the 200V voltage rating segment of this product line.
Compatible substitutes include the BYW29-200G and BYW29-200E from ON Semiconductor, as well as equivalent parts from STMicroelectronics and NXP Semiconductors bearing the BYW29-200 designation.