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The BYW75TR is a single avalanche diode manufactured by Vishay General Semiconductor - Diodes Division. It features a maximum DC reverse voltage (Vr) of 500 V and an average rectified current (Io) of 3 A. The device utilizes through-hole SOD-64 packaging. Key electrical characteristics include a peak forward surge current (Ifsm) of 100 A and avalanche technology construction.
Verify the specific suffix and package variant when ordering, as Vishay may offer multiple configurations within the BYW75 family. Confirm that the required 500 V rating and 3 A current capacity align with the circuit design specifications before finalizing procurement to ensure compatibility with existing system requirements.
Select this component when a through-hole solution is required for high-voltage isolation up to 500 V. The 3 A current rating makes it suitable for moderate power applications where avalanche ruggedness is necessary. Ensure the SOD-64 package fits the PCB layout constraints compared to surface-mount alternatives.
This part belongs to Vishay's general-purpose single diode lineup, specifically utilizing avalanche technology. It serves as a discrete semiconductor solution for rectification and protection in electronic circuits requiring higher voltage withstand capabilities than standard small-signal diodes.
Direct substitutes must match the 500 V Vr, 3 A Io, and through-hole SOD-64 package. Verify avalanche capability if used for clamping; otherwise, standard rectifier equivalents with matching voltage and current ratings may be considered if avalanche operation is not required.
The BYW75TR has a peak forward surge current (Ifsm) rating of 100 A.
Yes, the BYW75TR is constructed using avalanche technology, making it suitable for applications involving avalanche energy absorption.