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The Nexperia BZB84-C9V1-QR is a dual voltage regulator diode in the BZB84-Q series, housed in an SOT-23 surface-mount package. It features a dual common anode configuration with two independent cathodes. The nominal Zener voltage is 9.1 V with a tolerance of approximately ±5 %. Total power dissipation is limited to 300 mW, while non-repetitive peak reverse power dissipation reaches 40 W per diode. Operating junction temperature ranges from -55 °C to +150 °C. The device is qualified according to AEC-Q101 standards for automotive applications.
Verify the specific suffix and marking code against official Nexperia documentation before ordering. Confirm that the C-series tolerance aligns with design requirements. Ensure compatibility with standard SOT-23 footprints during PCB layout. Check for any recent product change notices affecting availability or specifications.
Select this component when dual independent voltage references are required in a minimal footprint. The C-series offers standard tolerance suitable for general-purpose applications. Consider thermal resistance limits if operating near maximum ambient temperatures. Verify that the 300 mW total dissipation rating accommodates the combined load of both diodes.
This part belongs to the BZB84-Q series, which includes 74 types covering nominal voltages from 2.4 V to 75 V. The series provides both B (±2 %) and C (±5 %) tolerance options. All variants share the same SOT-23 package and AEC-Q101 qualification, ensuring consistent mechanical and reliability characteristics across the range.
Direct substitutes include other BZB84-C9V1-Q variants from Nexperia. Cross-manufacturer replacements must match the dual common anode topology and SOT-23 pinout. Verify equivalent Zener voltage, power dissipation, and AEC-Q101 compliance before substitution.
Pin 1 is Cathode 1, Pin 2 is Cathode 2, and Pin 3 is the Common Anode.
Yes, the device is qualified according to the AEC-Q101 stress test qualification for discrete semiconductors.
The non-repetitive peak reverse power dissipation is 40 W per diode under specified pulse conditions.