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The BZX84C39TS-7-F is a triple surface mount Zener diode array manufactured by Diodes Incorporated. It integrates three isolated diode elements within an SOT-363 package, providing nominal Zener voltages of 39V with a tolerance range of 37V to 41V. The device operates at a test current (IZT) of 2mA and features a maximum Zener impedance (ZZT) of 130 Ohms at this current level. Power dissipation is rated at 200mW, with a thermal resistance of 625°C/W. Operating temperatures span from -65°C to +150°C, and the component complies with RoHS standards.
Verify the specific ordering suffix '-7-F' corresponds to the tape and reel packaging format containing 3000 units per reel. Confirm that the date code marking aligns with the required production timeline. Ensure the procurement documentation explicitly references the SOT-363 case outline dimensions to guarantee mechanical compatibility during assembly.
Select this component when multiple low-current Zener references are required in a compact footprint. The 39V breakdown voltage suits applications needing precise clamping or reference levels above standard logic thresholds. Verify that the 2mA test current requirement fits the available biasing resources in the target circuit design.
This part belongs to the BZX84C...TS series of triple Zener arrays. It shares the same physical SOT-363 package and electrical characteristics structure as other variants in the series, differing primarily in the specific nominal Zener voltage ratings provided for each of the three internal diode channels.
Direct replacements include other BZX84C39TS variants from Diodes Incorporated. Cross-manufacturer equivalents must match the SOT-363 package, 39V nominal voltage, and 200mW power dissipation rating. Verify pinout orientation and thermal resistance specifications before substitution.
The maximum reverse leakage current is specified as 0.1 µA at a reverse voltage of 27.3V.
The marking code is KPE, followed by the date code marking YM.
The temperature coefficient ranges from a minimum of 33.4 mV/°C to a maximum of 41.2 mV/°C at IZT = 5mA.