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Product Detailed Parameters
- Description：DIODE SIL CARB 1.2KV 17.5A TO252
- Series：Zero Recovery™
- Mfr：Wolfspeed, Inc.
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io)：17.5A
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 5 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：200 µA @ 1200 V
- Capacitance @ Vr, F：455pF @ 0V, 1MHz
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252-2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The Wolfspeed C2D05120E is a 1200 V, 5 A Silicon Carbide Schottky Diode housed in a TO-252-2 package. It features zero reverse recovery current and zero forward recovery voltage, enabling high-frequency operation with essentially no switching losses. The device supports continuous forward currents up to 17.5 A at 25 °C case temperature and operates within a junction temperature range of -55 °C to +175 °C.
Feature Summary
- Zero reverse recovery current and zero forward recovery voltage for minimal switching losses
- Positive temperature coefficient on forward voltage allowing parallel device operation without thermal runaway
- Temperature-independent switching behavior suitable for high-frequency applications
Applications
- Switch mode power supplies
- Power factor correction
- Motor drives
- High voltage multipliers
Procurement Notes
Verify the specific revision level against the latest official datasheet before finalizing procurement. Confirm that the TO-252-2 package marking matches the required identification. Ensure thermal management designs account for the specified maximum junction temperature limits and derating curves provided in the manufacturer documentation.
Selection Notes
Select this component when replacing bipolar rectifiers to achieve higher efficiency and reduced heat sink requirements. Consider the device's ability to operate at high frequencies and its positive temperature coefficient for applications requiring parallel configurations. Evaluate the thermal resistance characteristics against the expected operating environment.
Part Context
This silicon carbide Schottky diode belongs to Wolfspeed's discrete power semiconductor portfolio. It utilizes majority carrier technology to eliminate reverse recovery charge, distinguishing it from traditional PN junction diodes. The product is designed to support robust performance in demanding power electronics environments.
Replacement Considerations
Officially documented substitutes include other Wolfspeed SiC Schottky diodes within the same voltage and current ratings. Verify pinout compatibility and thermal interface requirements when transitioning between different package types or manufacturers.
FAQ
Does the C2D05120E exhibit reverse recovery charge?
No, as a majority carrier diode, it has zero reverse recovery charge.
What is the maximum operating junction temperature?
The maximum operating junction temperature is +175 °C.
