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Product Detailed Parameters
- Description：DIODE SIL CARB 600V 6A TO220-F2
- Series：Z-Rec®
- Mfr：Wolfspeed, Inc.
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：600 V
- Current - Average Rectified (Io)：6A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 2 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：50 µA @ 600 V
- Capacitance @ Vr, F：120pF @ 0V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package：TO-220-F2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The Wolfspeed C3D02060F is a third-generation 600 V, 6 A Silicon Carbide Schottky diode in a TO-220-F2 package. It features a maximum forward voltage of 1.7 V at 25 °C and 2.4 V at 175 °C (IF = 2 A). The device has a repetitive peak reverse voltage of 600 V and a non-repetitive surge current of 15.5 A at 25 °C. Thermal resistance from junction to case is typically 6.6 °C/W, with an operating temperature range of -55 °C to +175 °C.
Feature Summary
- Optimized for PFC boost diode applications
- Zero reverse recovery current and forward recovery voltage
- Temperature-independent switching behavior
- Fully isolated case design
Applications
- Switch Mode Power Supplies (SMPS)
- Free Wheeling Diodes in Inverter Stages
- Boost for PFC & DC-DC Stages
- Solar Inverters
- AC/DC Converters
Procurement Notes
Verify the specific part number suffix against official documentation to confirm packaging type. The datasheet indicates tube packing for this model. Confirm compliance status such as RoHS and REACH through manufacturer declarations before procurement.
Selection Notes
Select based on thermal management requirements given the 6.6 °C/W junction-to-case resistance. Ensure the application voltage does not exceed the 600 V rating. Consider the high surge current capability for transient protection needs.
Part Context
This component belongs to the Wolfspeed third-generation 600 V Silicon Carbide Schottky diode family. It utilizes SiC technology to achieve higher efficiency and power density compared to silicon-based solutions, enabling reduced cooling requirements and lower overall system costs.
Replacement Considerations
Consult official substitution guides for verified alternatives. Cross-reference electrical parameters and package dimensions when evaluating potential replacements.
