C3D03065E

$1.90

Description：DIODE SIL CARB 650V 11A TO252-2
Series：Z-Rec®
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:91203950ea4e Category: Single Diodes Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：DIODE SIL CARB 650V 11A TO252-2
Series：Z-Rec®
Mfr：Wolfspeed, Inc.
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：650 V
Current - Average Rectified (Io)：11A
Voltage - Forward (Vf) (Max) @ If：1.8 V @ 3 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：50 µA @ 650 V
Capacitance @ Vr, F：155pF @ 0V, 1MHz
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：TO-252-2
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

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C3D03065E

Overview

The C3D03065E is a 650 V Silicon Carbide Schottky Diode manufactured by Wolfspeed, Inc. It features a TO-252-2 package and supports continuous forward currents of 11 A at 25 °C case temperature and 3 A at 158 °C. The device exhibits a maximum forward voltage of 1.7 V at 3 A and 25 °C, with a peak reverse surge current capability of 26 A. Operating junction temperatures range from -55 °C to +175 °C, and the component offers a thermal resistance from junction to case of 3.2 °C/W.

Feature Summary

Zero reverse recovery current and zero forward recovery voltage
Temperature-independent switching behavior for high-frequency operation
Positive temperature coefficient on forward voltage enabling parallel device operation

Applications

Switch mode power supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free wheeling diodes in inverter stages
AC/DC converters

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact electrical tolerances and marking variations. Confirm compliance with RoHS and REACH standards prior to integration. Ensure that the TO-252-2 footprint matches the target PCB layout requirements. Validate thermal management solutions against the specified junction-to-case thermal resistance values under expected operating conditions.

Selection Notes

Select this component for applications requiring unipolar rectification with minimal switching losses. The positive temperature coefficient facilitates safe parallel operation without thermal runaway risks. Evaluate the forward voltage characteristics against system efficiency targets, particularly at elevated case temperatures where current derating applies. Consider the low capacitive stored energy for high-speed switching environments.

Part Context

This part belongs to the C3D series of silicon carbide Schottky diodes produced by Wolfspeed, Inc. The series utilizes wide bandgap SiC technology to replace traditional bipolar rectifiers. These devices are designed to reduce heat sink requirements and improve overall system efficiency through negligible switching losses and high-temperature operation capabilities.