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The C3D04065A is a third-generation 650 V Silicon Carbide Schottky diode manufactured by Wolfspeed, Inc. It features a TO-220-2 package with a maximum DC blocking voltage of 650 V and a continuous forward current rating of 13.5 A at 25°C case temperature. The device exhibits a typical forward voltage of 1.4 V at 4 A and 25°C junction temperature. Operating characteristics include a junction temperature range from -55°C to +175°C and a thermal resistance from junction to case of 2.9 °C/W.
Verify the component authenticity by checking the marking on the physical device against official documentation. Confirm that the ordering suffix matches the specified tube packing type. Ensure compliance requirements such as RoHS and REACh are met according to the manufacturer's declarations before finalizing procurement.
Select this component when high efficiency and fast switching are required in power electronics systems. The positive temperature coefficient allows for easy paralleling without thermal runaway concerns. Consider the TO-220-2 package for through-hole mounting applications requiring robust mechanical stability and effective heat dissipation.
This discrete Silicon Carbide Schottky diode belongs to Wolfspeed’s portfolio of wide-bandgap power devices. It is designed to replace silicon-based solutions to achieve higher frequencies and power densities. The product supports system cost reduction through improved thermal performance and reduced cooling requirements.
The datasheet indicates direct drop-in replacement capability for current silicon diodes and other silicon carbide diodes. Verify pinout compatibility and thermal interface specifications when substituting existing components in established designs.
No, as a majority carrier device, the C3D04065A has zero reverse recovery charge.
The maximum operating junction temperature is +175°C.