C3D06060F

$3.02

Description：DIODE SIC 600V 11.5A TO220-F2
Series：Z-Rec®
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:f8f6403b2afa Category: Single Diodes Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：DIODE SIC 600V 11.5A TO220-F2
Series：Z-Rec®
Mfr：Wolfspeed, Inc.
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：600 V
Current - Average Rectified (Io)：11.5A
Voltage - Forward (Vf) (Max) @ If：1.8 V @ 6 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：50 µA @ 600 V
Capacitance @ Vr, F：294pF @ 0V, 1MHz
Mounting Type：Through Hole
Package / Case：TO-220-2 Full Pack
Supplier Device Package：TO-220-F2
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

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C3D06060F

Overview

The C3D06060F is a third-generation silicon carbide Schottky barrier diode rated for 600 V DC blocking voltage and 11.5 A continuous forward current at 25°C case temperature. It features a TO-220-F2 package with an isolated case. Key electrical parameters include a maximum forward voltage of 1.7 V at 6 A and 25°C, and a reverse leakage current of 33 µA at 600 V and 25°C. The device exhibits zero reverse recovery charge and offers a thermal resistance from junction to case of 4.0 °C/W.

Feature Summary

Optimized for Power Factor Correction (PFC) boost diode applications
Zero reverse recovery current and forward recovery voltage
Temperature-independent switching behavior
Fully isolated case design

Applications

Switch Mode Power Supplies (SMPS)
Free Wheeling Diodes in Inverter Stages
Boost stages for PFC & DC-DC converters
Solar Inverters
AC/DC Converters

Procurement Notes

Verify the specific ordering suffix 'F' corresponds to the tube packing type as documented in the official Wolfspeed datasheet. Confirm that the component meets RoHS and REACh compliance requirements relevant to your target market regulations before finalizing procurement specifications.

Selection Notes

Select this component when designing systems requiring high-frequency operation and reduced cooling requirements due to SiC advantages. Ensure the application operates within the specified junction temperature range of -55°C to +175°C and accounts for current derating curves at elevated case temperatures to maintain reliability.

Part Context

This discrete silicon carbide Schottky diode belongs to Wolfspeed's third-generation 600 V family. It is designed to replace silicon-based solutions to achieve higher efficiency standards, increased power density, and lower overall system costs through improved thermal performance and fast switching capabilities.