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Product Detailed Parameters
- Description：DIODE SIL CARB 650V 20A TO252-2
- Series：Z-Rec®
- Mfr：Wolfspeed, Inc.
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：20A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 6 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：50 µA @ 650 V
- Capacitance @ Vr, F：295pF @ 0V, 1MHz
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252-2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The C3D06065E is a 650 V Silicon Carbide Schottky diode in a TO-252-2 package. It supports a maximum continuous forward current of 6 A at 135 °C and 20 A at 25 °C. The device features a typical forward voltage of 1.5 V at 6 A and 25 °C, with a maximum reverse current of 40 µA at 650 V. Thermal resistance from junction to case is 1.5 °C/W. Operating junction temperature ranges from -55 °C to +175 °C.
Feature Summary
- Zero reverse recovery current and zero forward recovery voltage for unipolar rectification
- Positive temperature coefficient on forward voltage enabling parallel operation without thermal runaway
- Temperature-independent switching behavior suitable for high-frequency applications
Applications
- Switch mode power supplies (SMPS)
- Boost diodes in PFC or DC/DC stages
- Free wheeling diodes in inverter stages
- AC/DC converters
Procurement Notes
Verify the specific part number against official Wolfspeed documentation to confirm active status and revision history. Ensure compatibility with industrial qualification requirements. Check datasheet for recommended solder pad layouts and mounting recommendations to maintain thermal performance and reliability standards during assembly.
Selection Notes
Select this component for designs requiring low conduction losses and high efficiency in power conversion circuits. Consider the thermal derating curves when determining heat sink requirements. The positive temperature coefficient allows for safe parallel connection to increase current handling capacity without complex balancing circuitry.
Part Context
This discrete SiC Schottky diode belongs to the C3D series designed to replace bipolar rectifiers. It utilizes silicon carbide technology to achieve higher system efficiency and reduced cooling requirements compared to traditional silicon solutions. The TO-252-2 package provides a compact form factor for surface-mount applications.
Replacement Considerations
Consult official substitution guides for verified alternatives within the same product family. Ensure any replacement maintains equivalent blocking voltage, current rating, and package dimensions.
