C3D08060A

Overview

The C3D08060A is a third-generation 600V, 8A Silicon Carbide Schottky Barrier diode manufactured by Wolfspeed. It utilizes a TO-220-2 package with a maximum repetitive peak reverse voltage of 600V and a continuous forward current rating of 24A at 25°C case temperature. The device exhibits a typical forward voltage of 1.5V at 8A and 25°C, with a junction-to-case thermal resistance of 1.4°C/W. Operating temperatures range from -55°C to +175°C.

Feature Summary

• Low forward voltage drop with positive temperature coefficient
• Zero reverse recovery current and zero forward recovery voltage
• Temperature-independent switching behavior

Applications

• Industrial switched mode power supplies
• Uninterruptible and auxiliary power supplies
• Boost stages for PFC and DC-DC converters
• Solar inverters

Procurement Notes

Verify the specific part number C3D08060A against official Wolfspeed documentation to confirm the TO-220-2 package type and electrical ratings. Ensure compatibility with system thermal requirements given the 1.4°C/W junction-to-case resistance. Confirm RoHS compliance status through manufacturer declarations if required for regulatory adherence.

Selection Notes

Select this component for high-efficiency rectification where low switching losses are critical. The silicon carbide technology enables higher operating frequencies compared to silicon solutions. Consider the 600V blocking capability and 8A continuous current rating when designing boost or freewheeling circuits in industrial power systems.

Part Context

This discrete SiC Schottky diode belongs to Wolfspeed's third-generation 600V product family. It is designed to replace traditional silicon diodes in applications demanding reduced cooling requirements and improved thermal performance. The majority carrier operation eliminates reverse recovery charge, facilitating easier paralleling without thermal runaway concerns.

Replacement Considerations

The datasheet notes that these devices can serve as direct drop-in replacements for certain silicon diodes and other silicon carbide diodes. Verify pinout compatibility and thermal interface specifications before substituting existing components in established designs.

FAQ

Does the C3D08060A exhibit reverse recovery charge?

No, as a majority carrier device, the C3D08060A has zero reverse recovery charge.

What is the maximum junction temperature for this diode?

The maximum junction temperature is +175°C.