C3D10060G-TR

Overview

The C3D10060G-TR is a discrete Silicon Carbide Schottky diode manufactured by Wolfspeed, Inc. It features a TO-263-2 package and operates with a maximum repetitive peak reverse voltage of 600 V. The device supports a continuous forward current of 10 A at elevated temperatures and handles non-repetitive surge currents up to 860 A. Key electrical parameters include a typical forward voltage of 1.5 V at 10 A and 25 °C, and a junction-to-case thermal resistance of 1.2 °C/W. It functions within a temperature range of -55 °C to +175 °C.

Feature Summary

• Zero reverse recovery current and zero forward recovery voltage for minimal switching losses
• Positive temperature coefficient on forward voltage enabling parallel operation without thermal runaway
• High-frequency operation capability with extremely fast switching behavior
• Temperature-independent switching characteristics

Applications

• Switch mode power supplies (SMPS)
• Boost diodes in PFC or DC/DC stages
• Free wheeling diodes in inverter stages
• AC/DC converters

Procurement Notes

Verify the specific ordering suffix '-TR' corresponds to tape and reel packaging rather than tube packaging when sourcing components. Confirm that the received units match the Wolfspeed branding and part marking 'C3D10060'. Ensure compliance documentation aligns with RoHS and REACH requirements as specified in the datasheet.

Selection Notes

Select this component for designs requiring high efficiency and reduced heat sink sizes due to essentially no switching losses. It serves as a direct replacement for bipolar rectifiers where unipolar performance is needed. Consider the TO-263-2 package dimensions and recommended solder pad layout during PCB design to ensure proper thermal management and mechanical stability.

Part Context

This discrete SiC Schottky diode belongs to Wolfspeed's industrial qualified product line. It is designed to replace traditional silicon or bipolar devices in power conversion systems. The component utilizes majority carrier conduction, distinguishing it from minority carrier devices, which eliminates reverse recovery charge issues common in standard PN junction diodes.

Replacement Considerations

C3D10060G

FAQ

Does the C3D10060G exhibit reverse recovery charge?

No, it is a majority carrier diode, so there is no reverse recovery charge.

What is the maximum dV/dt ruggedness rating?

The diode has a dV/dt rating of 200 V/ns with VR ranging from 0 to 600 V.