ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：DIODE SIL CARB 650V 30A TO220-2
- Series：Z-Rec®
- Mfr：Wolfspeed, Inc.
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：30A
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 10 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：60 µA @ 650 V
- Capacitance @ Vr, F：480pF @ 0V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-220-2
- Supplier Device Package：TO-220-2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
Download product information
Overview
The Wolfspeed C3D10065A is a third-generation 650 V Silicon Carbide Schottky diode in a TO-220-2 package. It features a maximum repetitive peak reverse voltage of 650 V and a continuous forward current rating of 10 A at 153 °C case temperature. The typical forward voltage is 1.5 V at 10 A and 25 °C, rising to 2.4 V max at 175 °C. Reverse current is 60 µA max at 650 V and 25 °C. Power dissipation reaches 136.5 W at 25 °C. Junction temperature ranges from -55 °C to +175 °C.
Feature Summary
- Low forward voltage drop with positive temperature coefficient
- Zero reverse recovery current and forward recovery voltage
- Temperature-independent switching behavior
Applications
- Industrial switched mode power supplies
- Uninterruptible and auxiliary power supplies
- Boost stages for PFC and DC-DC converters
- Solar inverters
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type and compliance status. Ensure that thermal management designs account for the specified junction-to-case thermal resistance and power derating curves provided in the datasheet. Confirm RoHS and REACH compliance declarations are available through authorized channels before finalizing procurement specifications.
Selection Notes
Select this component when high-frequency operation and reduced cooling requirements are necessary compared to silicon solutions. The device allows easy paralleling without thermal runaway concerns. Evaluate system efficiency gains against the specific forward voltage characteristics at expected operating temperatures and currents.
Part Context
This discrete SiC Schottky diode belongs to Wolfspeed's third-generation 650 V product family. It utilizes silicon carbide technology to achieve higher efficiency standards than silicon-based alternatives. The component supports higher switching frequencies and power densities while enabling lower overall system costs through improved thermal performance.
Replacement Considerations
The datasheet indicates direct drop-in replacement capability for certain silicon diodes and other silicon carbide diodes within compatible voltage and current ratings. Verify pinout compatibility and thermal interface requirements when substituting legacy components.
FAQ
Does the C3D10065A exhibit reverse recovery charge?
No, as a majority carrier device, the C3D10065A has zero reverse recovery charge.
What is the maximum junction temperature for this diode?
The maximum junction temperature is +175 °C.
