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The C3D10065E is a 650 V Silicon Carbide Schottky Diode in a TO-252-2 package. It features a maximum continuous forward current of 10 A at 153 °C and 32 A at 25 °C. The typical forward voltage is 1.5 V at 10 A and 25 °C, rising to 2.4 V max at 175 °C. Reverse current is 60 µA max at 650 V and 25 °C. Thermal resistance from junction to case is 1.0 °C/W. Operating temperature range spans -55 °C to +175 °C.
Verify the specific ordering suffix 'E' corresponds to the TO-252-2 surface mount package configuration. Confirm compliance documentation including RoHS and REACH declarations directly with Wolfspeed representatives or official product documentation channels prior to final procurement decisions.
Select this component for designs requiring replacement of bipolar rectifiers to achieve essentially no switching losses and higher efficiency. Evaluate thermal management requirements based on the 1.0 °C/W junction-to-case thermal resistance and derating curves provided in the datasheet for continuous and surge current applications.
This discrete SiC Schottky Diode belongs to the C3D series manufactured by Wolfspeed. The manufacturer transitioned branding from Cree, Inc. to Wolfspeed, Inc., meaning products may carry either name during the transition period. This specific part number represents a standard industrial-grade silicon carbide rectifier optimized for power conversion efficiency.
No public confirmed substitute part numbers are documented in the source material.