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Product Detailed Parameters
- Description：DIODE SIL CARB 650V 39A TO220-2
- Series：Z-Rec®
- Mfr：Wolfspeed, Inc.
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：39A
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 16 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：95 µA @ 650 V
- Capacitance @ Vr, F：878pF @ 0V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-220-2
- Supplier Device Package：TO-220-2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The C3D16065A is a third-generation Silicon Carbide Schottky diode from Wolfspeed, housed in a TO-220-2 package. It features a repetitive peak reverse voltage of 650 V and a continuous forward current rating of 16 A at 142 °C case temperature. The device exhibits a maximum forward voltage of 2.4 V at 175 °C junction temperature and a typical non-repetitive surge current capability of 162 A. With a power dissipation rating of 150 W at 25 °C and a thermal resistance of 1 °C/W, it supports operation across a junction temperature range of -55 °C to +175 °C.
Feature Summary
- Low forward voltage drop with a positive temperature coefficient
- Zero reverse recovery current and forward recovery voltage
- Temperature-independent switching behavior
Applications
- Industrial switched mode power supplies
- Uninterruptible and auxiliary power supplies
- Boost stages for PFC and DC-DC converters
- Solar inverters
Procurement Notes
Verify the specific revision status and RoHS compliance documentation directly with Wolfspeed or authorized distributors before finalizing procurement plans. Ensure that the ordering suffix matches the required tube packaging configuration. Confirm that the component meets all applicable REACh SVHC requirements for your target market regulations. Cross-reference the datasheet version against the manufacturing date code to ensure consistency with design specifications.
Selection Notes
Select this component when designing systems requiring high-frequency operation and reduced cooling requirements compared to silicon solutions. Evaluate the thermal derating curves to ensure the continuous forward current remains within safe limits at elevated case temperatures. Consider the zero reverse recovery characteristic for applications demanding ultra-fast switching operations without associated tail currents.
Part Context
This discrete SiC Schottky diode belongs to Wolfspeed's third-generation product family designed to improve system efficiency through lower conduction losses. It serves as a direct replacement for certain silicon diodes in diverse power electronics applications. The technology enables easier paralleling without thermal runaway concerns, supporting higher power densities in industrial and renewable energy systems.
Replacement Considerations
The datasheet indicates the device can serve as a direct drop-in replacement for current silicon diodes and other silicon carbide diodes. Verify pinout compatibility and thermal interface requirements when substituting legacy components in existing PCB layouts.
FAQ
Does the C3D16065A exhibit reverse recovery charge?
No, as a majority carrier device, the C3D16065A has zero reverse recovery charge.
What is the maximum junction temperature for this diode?
The maximum operating junction temperature is +175 °C.
