C3M0032120J2-TR

$17.98

Description：MOSFET N-CH 1200V 68A TO263
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0ba49e5fbbd5 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 1200V 68A TO263
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：3.6V @ 11.5mA
Gate Charge (Qg) (Max) @ Vgs：111 nC @ 15 V
Vgs (Max)：-8V, +19V
Input Capacitance (Ciss) (Max) @ Vds：3424 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：277W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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C3M0032120J2-TR

Overview

The Wolfspeed C3M0032120J2-TR is a third-generation silicon carbide (SiC) MOSFET in a TO-263-7XL package. It features a 1200V drain-source breakdown voltage and a typical on-resistance of 32mΩ at 25°C. The device supports a continuous drain current of 74A and a pulsed current of 264A. Key electrical parameters include a gate threshold voltage of 2.9V, total gate charge of 108nC, and forward transconductance of 23S. Operating junction temperature ranges from -55°C to +175°C with a thermal resistance of 0.34°C/W.

Feature Summary

Third-generation SiC MOSFET technology optimized for high-speed switching and low capacitances.
Package design includes separate driver source pin and larger drain tab for improved thermal performance.
Fast intrinsic diode with low reverse recovery characteristics.
Halogen-free and RoHS compliant construction.

Applications

Motor Control
EV Battery Chargers
High Voltage DC/DC Converters

Procurement Notes

Verify the specific ordering suffix '-TR' against official manufacturer documentation to confirm tape-and-reel packaging requirements. Ensure compatibility with recommended operating gate voltages and thermal management specifications during procurement planning.

Selection Notes

Select this component for applications requiring high blocking voltage combined with low on-state resistance. Consider the TO-263-7XL footprint and Kelvin source pin configuration for optimal gate drive performance and thermal dissipation in power conversion systems.

Part Context

This part belongs to the Wolfspeed C3M series of discrete silicon carbide MOSFETs. It utilizes industry-standard package footprints designed to facilitate system upgrades and cost optimization across various power levels.

Replacement Considerations

Consult official datasheets for cross-reference information. Verify pinout compatibility and electrical parameter alignment before substituting with other manufacturers' components.