C4D02120A

$2.41

Description：DIODE SIL CARB 1200V 10A TO220
Series：Z-Rec®
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:758c5af90a3d Category: Single Diodes Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：DIODE SIL CARB 1200V 10A TO220
Series：Z-Rec®
Mfr：Wolfspeed, Inc.
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io)：10A
Voltage - Forward (Vf) (Max) @ If：1.8 V @ 2 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：50 µA @ 1200 V
Capacitance @ Vr, F：167pF @ 0V, 1MHz
Mounting Type：Through Hole
Package / Case：TO-220-2
Supplier Device Package：TO-220-2
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

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C4D02120A

Overview

The Wolfspeed C4D02120A is a fourth-generation Silicon Carbide Schottky Barrier diode housed in a TO-220-2 package. It features a repetitive peak reverse voltage of 1200 V and a continuous forward current rating of 10 A at 25°C case temperature. The device exhibits a typical forward voltage of 1.4 V at 2 A and 25°C, with a maximum junction-to-case thermal resistance of 2.5 °C/W. Operating temperatures range from -55°C to +175°C.

Feature Summary

Low forward voltage drop with a positive temperature coefficient
Zero reverse recovery current and zero forward recovery voltage
Temperature-independent switching behavior

Applications

Industrial switched mode power supplies
Uninterruptible and auxiliary power supplies
Boost stages for Power Factor Correction (PFC) and DC-DC converters
Solar inverters

Procurement Notes

Verify the specific revision status of the datasheet before finalizing designs, as Wolfspeed periodically updates documentation. Confirm that the TO-220-2 tube packaging aligns with your assembly requirements. Ensure compliance with RoHS and REACh directives relevant to your target market. Cross-reference the latest electrical characteristics against your system's thermal and voltage constraints.

Selection Notes

Select this component for applications requiring high-frequency operation and reduced cooling needs due to SiC advantages. Consider the 1200 V blocking capability for robust performance in industrial environments. Evaluate the low capacitive charge for efficiency in boost topologies. Ensure the TO-220-2 package fits the mechanical layout and thermal management strategy of the host system.

Part Context

This discrete silicon carbide Schottky diode belongs to Wolfspeed’s fourth-generation product line. It is designed to replace silicon-based solutions to achieve higher efficiency standards and power densities. The device allows for easy paralleling without thermal runaway concerns, supporting diverse power electronics systems.