C4D05120A

Overview

The C4D05120A is a fourth-generation 1200 V Silicon Carbide Schottky Barrier diode manufactured by Wolfspeed, Inc. It is housed in a TO-220-2 package and rated for a continuous forward current of 19 A at a case temperature of 25 °C. The device features a maximum repetitive peak reverse voltage of 1200 V and a typical junction-to-case thermal resistance of 1.5 °C/W. Electrical characteristics include a maximum forward voltage of 1.8 V at 5 A and 25 °C, with a total capacitive charge of 27 nC at 800 V.

Feature Summary

• Zero reverse recovery current and forward recovery voltage due to majority carrier operation
• Low forward voltage drop with a positive temperature coefficient
• Temperature-independent switching behavior

Applications

• Industrial Switched Mode Power Supplies
• Uninterruptible & AUX Power Supplies
• Boost for PFC & DC-DC Stages
• Solar Inverters

Procurement Notes

Verify the specific revision status and datasheet version before finalizing designs, as Wolfspeed periodically updates documentation. Confirm that the TO-220-2 package dimensions and mounting torque requirements align with your mechanical constraints. Ensure compliance with RoHS and REACh regulations if required for your target market. Check for any recent product lifecycle announcements regarding availability or obsolescence directly from Wolfspeed.

Selection Notes

Select this component when high-frequency operation and reduced cooling requirements are necessary compared to silicon solutions. The device allows for easy paralleling without thermal runaway concerns. Consider the 1200 V rating for robustness against voltage transients in boost stages. Evaluate the thermal performance based on the specified junction-to-case resistance for your heat sink design.

Part Context

This discrete SiC Schottky diode belongs to Wolfspeed's fourth-generation portfolio, designed to replace traditional silicon-based rectifiers. It enables power electronics systems to achieve higher efficiency standards and operate at increased frequencies. The technology supports improved power densities and lower overall system costs through reduced cooling needs.

Replacement Considerations

No public confirmed substitute part numbers are provided in the source material.

FAQ

Does the C4D05120A exhibit reverse recovery charge?

No, as a Silicon Carbide Schottky diode, it is a majority carrier device and has zero reverse recovery charge.

What is the maximum junction temperature for this device?

The maximum junction temperature range is -55 °C to +175 °C.