C4D08120E-TR

Overview

The Wolfspeed C4D08120E-TR is a 1200 V Silicon Carbide Schottky diode in a TO-252-2 package. It features an 8 A continuous forward current and 136.5 W power dissipation at 25 °C. The device exhibits a maximum forward voltage of 1.8 V at 8 A and 25 °C, with a reverse leakage current of 250 µA at 1200 V. It supports junction temperatures from -55 °C to +175 °C and offers high dV/dt ruggedness of 200 V/ns.

Feature Summary

• Unipolar majority carrier design eliminates reverse recovery charge for zero switching losses
• Positive temperature coefficient on forward voltage enables safe parallel operation without thermal runaway
• High-frequency operation capability supported by extremely fast switching characteristics

Applications

• Solar inverters
• Switch mode power supplies (SMPS)
• Boost diodes in PFC or DC/DC stages
• Free wheeling diodes in inverter stages
• AC/DC converters

Procurement Notes

Verify the specific ordering suffix '-TR' against the official datasheet to confirm tape-and-reel packaging requirements. Ensure the component matches the exact Wolfspeed part number to avoid discrepancies in electrical parameters or physical dimensions during integration.

Selection Notes

Select this component for designs requiring high efficiency and reduced heat sink sizes due to negligible switching losses. Consider the positive temperature coefficient for applications needing reliable parallel device operation. Evaluate thermal management capabilities based on the specified power dissipation limits across the operating temperature range.

Part Context

This discrete silicon carbide Schottky rectifier belongs to Wolfspeed's portfolio of high-performance power semiconductors. It utilizes SiC technology to replace traditional bipolar rectifiers, offering superior performance in terms of switching speed and thermal stability for modern power conversion systems.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.