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Product Detailed Parameters
- Description：DIODE SIL CARB 1.2KV 31.5A TO247
- Series：Z-Rec®
- Mfr：Wolfspeed, Inc.
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io)：31.5A
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 10 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：250 µA @ 1200 V
- Capacitance @ Vr, F：754pF @ 0V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-247-2
- Supplier Device Package：TO-247-2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The Wolfspeed C4D10120H is a fourth-generation 1200 V Silicon Carbide Schottky diode housed in a TO-247-2 package. It features a maximum repetitive peak reverse voltage of 1200 V and a continuous forward current rating of 31.5 A at 25°C case temperature. The device exhibits a typical forward voltage of 1.5 V at 10 A and 25°C, with a maximum junction-to-case thermal resistance of 0.98 °C/W. Operating temperatures range from -55°C to +175°C.
Feature Summary
- Low forward voltage drop with positive temperature coefficient
- Zero reverse recovery current and zero forward recovery voltage
- Temperature-independent switching behavior
Applications
- Industrial switched mode power supplies
- Uninterruptible and auxiliary power supplies
- Boost stages for Power Factor Correction (PFC) and DC-DC converters
- Solar inverters
Procurement Notes
Verify the specific ordering suffix 'H' against the manufacturer's official documentation to confirm the packing type and compliance status. Ensure that the TO-247-2 package dimensions and mounting torque specifications align with the target PCB layout and mechanical assembly requirements before finalizing procurement.
Selection Notes
Select this component when high-frequency operation and elevated efficiency are required compared to silicon-based solutions. The SiC technology allows for easier paralleling without thermal runaway concerns. Consider the reduced cooling requirements and improved thermal performance to achieve lower overall system costs in diverse power electronics applications.
Part Context
This device belongs to Wolfspeed's fourth-generation 1200 V Silicon Carbide Schottky diode portfolio. It utilizes majority carrier conduction to eliminate reverse recovery charge, enabling higher switching frequencies and power densities than traditional silicon alternatives while maintaining robust thermal stability.
Replacement Considerations
No public confirmed substitute part numbers are documented in the provided datasheet.
FAQ
Does the C4D10120H exhibit reverse recovery charge?
No, as a Silicon Carbide Schottky diode utilizing majority carriers, it has zero reverse recovery charge.
What is the maximum junction temperature for this diode?
The maximum operating junction temperature is +175°C.
