C4D20120A

Overview

The C4D20120A is a fourth-generation Silicon Carbide Schottky diode rated for 1200 V repetitive peak reverse voltage and 54.5 A continuous forward current at 25°C case temperature. It utilizes a TO-220-2 package with a typical junction-to-case thermal resistance of 0.6 °C/W. Key electrical parameters include a maximum forward voltage of 1.8 V at 20 A and 25°C, and a total capacitive charge of 99 nC at 800 V reverse bias.

Feature Summary

• Zero reverse recovery current and forward recovery voltage due to majority carrier operation
• Low forward voltage drop with a positive temperature coefficient
• Temperature-independent switching behavior

Applications

• Industrial switched mode power supplies
• Uninterruptible and auxiliary power supplies
• Boost stages for Power Factor Correction (PFC) and DC-DC converters
• Solar inverters

Procurement Notes

Verify the specific revision status and packaging type before ordering. The datasheet indicates tube packing. Confirm that the component meets all necessary safety and regulatory compliance requirements for your specific application environment, as Wolfspeed disclaims liability for end-use suitability.

Selection Notes

Select this component for high-efficiency rectification where low switching losses are critical. Ensure the thermal design accommodates the 250 W power dissipation rating at 25°C case temperature. Verify that the system voltage does not exceed the 1200 V blocking capability under all operating transients.

Part Context

This device belongs to Wolfspeed's fourth-generation Silicon Carbide discrete diode portfolio. It is designed to replace silicon-based solutions in power electronics systems requiring higher efficiency, higher operating frequencies, and greater power density while reducing overall cooling requirements.

Replacement Considerations

No direct substitute part numbers are documented in the provided source material.