C4D20120G

C4D20120G

  • Description:DIODE SIL CARB 1.2KV 56A TO263-2
  • Series:-
  • Mfr:Wolfspeed, Inc.
  • Package:Tube

SKU:a8278c642ad2 Category: Brand:

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Product Detailed Parameters

  • Description:DIODE SIL CARB 1.2KV 56A TO263-2
  • Series:-
  • Mfr:Wolfspeed, Inc.
  • Package:Tube
  • Technology:-
  • Voltage - DC Reverse (Vr) (Max):-
  • Current - Average Rectified (Io):-
  • Voltage - Forward (Vf) (Max) @ If:-
  • Speed:-
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:-
  • Capacitance @ Vr, F:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Operating Temperature - Junction:-
  • Grade:-
  • Qualification:-

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C4D20120G

Overview

The C4D20120G is a fourth-generation silicon carbide Schottky diode rated for 1200 V and 20 A. It utilizes Wolfspeed's proprietary JBS technology to achieve low forward voltage drop and minimal reverse recovery charge. The device is housed in a TO-247 package, designed for high thermal performance and reliability in demanding power conversion applications.

Feature Summary

  • Fourth-generation silicon carbide construction
  • Junction Barrier Schottky technology
  • Low forward voltage characteristics
  • Minimal reverse recovery charge

Applications

  • High-efficiency DC-DC converters
  • Power factor correction circuits
  • Industrial motor drives
  • Uninterruptible power supplies

Procurement Notes

Verify the specific suffix 'G' against the manufacturer's current datasheet to confirm pinout and packaging details. Ensure compatibility with existing thermal management designs. Confirm RoHS compliance status as per the latest official documentation before integration.

Selection Notes

Select this component for applications requiring high switching frequencies and reduced conduction losses. Compare thermal resistance values against system constraints. Evaluate total cost of ownership considering efficiency gains versus unit cost in high-volume production environments.

Part Context

Wolfspeed manufactures this SiC diode as part of its discrete power semiconductor portfolio. The product line focuses on replacing traditional silicon components to improve energy efficiency. The company provides reference designs and evaluation kits to support development cycles.

Replacement Considerations

Direct substitutes may include other 1200V 20A SiC Schottky diodes from different manufacturers. Verify electrical parameters such as forward voltage and reverse leakage current. Check mechanical footprint compatibility with existing PCB layouts.

C4D20120GC4D20120G

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