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The C6D04065E is a 650 V, 4 A Silicon Carbide Schottky Diode utilizing Wolfspeed's 6th generation technology. It features a TO-252-2 package with a maximum repetitive peak reverse voltage of 650 V and a continuous forward current rating of 16 A at 25 °C case temperature. The device exhibits a typical forward voltage of 1.27 V at 4 A and 25 °C, with a maximum junction-to-case thermal resistance of 2.89 °C/W. Operating temperatures range from -55 °C to +175 °C.
Verify the specific ordering suffix matches the required tape and reel configuration for automated assembly. Confirm that the component marking aligns with the datasheet specifications. Ensure compliance with RoHS and REACH directives as stated in the manufacturer documentation before finalizing procurement orders.
Select this component for designs requiring high efficiency and reduced heat sink requirements due to low forward voltage drop. Consider the positive temperature coefficient for parallel device operation without thermal runaway risks. Evaluate the thermal impedance characteristics against the specific duty cycle and ambient conditions of the target application.
This silicon carbide diode belongs to the C6D series, representing Wolfspeed's sixth-generation planar technology. It serves as a high-performance alternative to traditional silicon rectifiers in medium-power conversion circuits. The device is designed to increase system power density while maintaining robust reliability across wide temperature ranges.
Consult official substitution guides for equivalent voltage and current ratings. Verify pinout compatibility and thermal resistance values when replacing legacy silicon diodes or earlier generation SiC devices.