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The C6D06065A is a 6th generation Silicon Carbide Schottky diode rated for 650 V repetitive peak reverse voltage and 24 A continuous forward current at 25°C. It features a TO-220-2 package with a maximum forward voltage of 1.50 V at 6 A and 25°C, rising to 1.60 V at 175°C. The device exhibits zero reverse recovery charge and temperature-independent switching behavior. Thermal resistance from junction to case is typically 2.05 °C/W, supporting operation within a -55°C to +175°C junction temperature range.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type and compliance status. Ensure that the procurement channel provides valid traceability for RoHS and REACH declarations. Confirm that the component matches the exact Wolfspeed part number to avoid discrepancies in electrical characteristics or thermal performance specifications.
Select this component when designing systems requiring high efficiency and reduced cooling requirements compared to silicon solutions. The positive temperature coefficient allows for easy paralleling without thermal runaway concerns. Evaluate the thermal management strategy based on the specified junction-to-case thermal resistance and power dissipation limits under expected operating conditions.
This discrete SiC Schottky diode belongs to Wolfspeed's 6th generation product family. It is designed to replace silicon diodes in applications demanding higher frequencies and power densities. The technology enables lower overall system costs through improved thermal performance and reduced conduction losses.
The datasheet indicates direct drop-in replacement capability for current silicon diodes and other silicon carbide diodes. Verify pinout compatibility and thermal interface requirements when substituting legacy components.
No, as a majority carrier device, it has zero reverse recovery charge.
The maximum junction temperature is +175°C.