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The C6D06065E-TR is a 650 V, 6 A Silicon Carbide Schottky Diode manufactured by Wolfspeed. It utilizes new 6th generation technology and features low forward voltage drop (VF) of 1.27 V typical at 6 A and 25 °C, zero reverse recovery current, and zero forward recovery voltage. The device operates with temperature-independent switching behavior and exhibits a positive temperature coefficient on VF. It is housed in a TO-252-2 package and supports an operating junction and storage temperature range from -55 to +175 °C.
Verify the specific ordering suffix '-TR' indicates tape and reel packaging when sourcing this component. Confirm that the manufacturer documentation aligns with the requested package type and quantity format. Ensure compliance requirements such as RoHS are met for your application. Cross-reference the datasheet revision date to ensure you have the most current specifications available.
Select this component for applications requiring high system-level efficiency and increased power density. The device's ability to parallel without thermal runaway due to its positive temperature coefficient on VF makes it suitable for higher current designs. Consider its low heat sink requirements compared to silicon alternatives when designing thermal management solutions.
This discrete SiC Schottky Diode belongs to the C6D family, which offers direct drop-in replacement capabilities for current silicon diodes and other silicon carbide diodes. The product line emphasizes robust MPS technology with high surge capability and high reverse-voltage blocking capability. It is designed to boost performance in hard switching conditions.
The datasheet states this component is a direct drop-in replacement for current silicon diodes and other silicon carbide diodes. No specific alternative part numbers are listed in the provided documentation.