C6D06065E-TR

C6D06065E-TR

$3.11
  • Description:DIODE SIL CARB 650V 23A TO2522
  • Series:Z-Rec®
  • Mfr:Wolfspeed, Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:5ea96e3b7b3c Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE SIL CARB 650V 23A TO2522
  • Series:Z-Rec®
  • Mfr:Wolfspeed, Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):650 V
  • Current - Average Rectified (Io):23A
  • Voltage - Forward (Vf) (Max) @ If:1.5 V @ 6 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:30 µA @ 650 V
  • Capacitance @ Vr, F:394pF @ 0V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:TO-252-2
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Grade:-
  • Qualification:-

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C6D06065E-TR

Overview

The C6D06065E-TR is a 650 V, 6 A Silicon Carbide Schottky Diode manufactured by Wolfspeed. It utilizes new 6th generation technology and features low forward voltage drop (VF) of 1.27 V typical at 6 A and 25 °C, zero reverse recovery current, and zero forward recovery voltage. The device operates with temperature-independent switching behavior and exhibits a positive temperature coefficient on VF. It is housed in a TO-252-2 package and supports an operating junction and storage temperature range from -55 to +175 °C.

Feature Summary

  • New 6th generation technology
  • Low forward voltage drop (VF)
  • Zero reverse recovery current
  • Zero forward recovery voltage
  • Low leakage current (Ir)
  • Temperature-independent switching behavior
  • Positive temperature coefficient on VF

Applications

  • Switch mode power supplies (SMPS)
  • Server/telecom power supplies
  • Industrial power supplies
  • Solar
  • UPS

Procurement Notes

Verify the specific ordering suffix '-TR' indicates tape and reel packaging when sourcing this component. Confirm that the manufacturer documentation aligns with the requested package type and quantity format. Ensure compliance requirements such as RoHS are met for your application. Cross-reference the datasheet revision date to ensure you have the most current specifications available.

Selection Notes

Select this component for applications requiring high system-level efficiency and increased power density. The device's ability to parallel without thermal runaway due to its positive temperature coefficient on VF makes it suitable for higher current designs. Consider its low heat sink requirements compared to silicon alternatives when designing thermal management solutions.

Part Context

This discrete SiC Schottky Diode belongs to the C6D family, which offers direct drop-in replacement capabilities for current silicon diodes and other silicon carbide diodes. The product line emphasizes robust MPS technology with high surge capability and high reverse-voltage blocking capability. It is designed to boost performance in hard switching conditions.

Replacement Considerations

The datasheet states this component is a direct drop-in replacement for current silicon diodes and other silicon carbide diodes. No specific alternative part numbers are listed in the provided documentation.

C6D06065E-TRC6D06065E-TR
$3.11
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