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The C6D06065E is a 650 V, 6 A Silicon Carbide Schottky Diode manufactured by Wolfspeed. It utilizes new 6th generation technology and features a TO-252-2 package. Key electrical parameters include a maximum repetitive peak reverse voltage of 650 V and a continuous forward current rating of 23 A at 25 °C case temperature. The typical forward voltage is 1.27 V at 6 A and 25 °C, with a maximum leakage current of 30 µA at 650 V and 25 °C. The device operates within a junction and storage temperature range of -55 to +175 °C.
Verify the specific part number against official Wolfspeed documentation to ensure accuracy. Confirm compliance requirements such as RoHS status through manufacturer declarations. Check for any recent branding updates or revisions in the datasheet that may affect component identification or specifications.
Select this component for designs requiring high efficiency and reduced heat sink requirements due to low forward voltage drop. Consider its capability for parallel operation without thermal runaway. Ensure the application environment stays within the specified operating junction temperature limits.
This discrete SiC Schottky Diode belongs to the C6D family from Wolfspeed. It serves as a direct drop-in replacement for current silicon diodes and other silicon carbide diodes in various power conversion topologies. The device is designed to increase system power density.
The datasheet indicates it is a direct drop-in replacement for current silicon diodes and other silicon carbide diodes. No specific alternative part numbers are listed in the provided documentation.
No, it is a majority carrier diode with zero reverse recovery charge.
The maximum operating junction temperature is +175 °C.