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Product Detailed Parameters
- Description：DIODE SIL CARBIDE 650V 21A 4QFN
- Series：-
- Mfr：Wolfspeed, Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：21A
- Voltage - Forward (Vf) (Max) @ If：1.5 V @ 6 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：20 µA @ 650 V
- Capacitance @ Vr, F：393pF @ 0V, 1MHz
- Mounting Type：Surface Mount
- Package / Case：4-PowerVQFN
- Supplier Device Package：4-QFN (8x8)
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The C6D06065Q-TR is a 6th generation 650 V Silicon Carbide Schottky diode in a QFN 8x8 package. It features a maximum repetitive peak reverse voltage of 650 V and a continuous forward current rating of 25 A at 25°C case temperature. The typical forward voltage is 1.27 V at 6 A and 25°C, rising to 1.37 V at 175°C. Reverse leakage current is typically 2 µA at 650 V and 25°C. The device operates within a junction temperature range of -55°C to +175°C and has a thermal resistance from junction to case of 2.0 °C/W.
Feature Summary
- Low forward voltage drop with a positive temperature coefficient
- Zero reverse recovery current and forward recovery voltage
- Temperature-independent switching behavior
- Low profile package with low inductance
Applications
- Enterprise power, server, and telecom power supplies
- Switched mode power supplies
- Industrial power supplies
- Boost power factor correction
- Bootstrap diode applications
Procurement Notes
Verify the specific ordering suffix '-TR' corresponds to the Tape & Reel packing type as listed in the product ordering information section of the datasheet. Confirm that the component meets RoHS compliance standards and check for REACh SVHC declarations through Wolfspeed representatives or official documentation portals before procurement.
Selection Notes
Select this component for designs requiring high efficiency and frequency operation due to its zero reverse recovery charge. Ensure the thermal management solution supports the specified junction-to-case thermal resistance of 2.0 °C/W. Verify that the system's operating temperature remains within the -55°C to +175°C junction range and that the forward current does not exceed the derated limits shown in the datasheet figures.
Part Context
This part belongs to the 6th generation 650 V Silicon Carbide Schottky diode family from Wolfspeed. It utilizes SiC technology to offer higher efficiency than silicon-based solutions, enabling higher frequencies and power densities. The QFN 8x8 package provides a low-profile form factor suitable for space-constrained industrial and commercial power electronics applications.
Replacement Considerations
The datasheet identifies this device as a direct drop-in replacement for current silicon diodes and other silicon carbide diodes. No specific alternative part numbers are provided in the source material.
FAQ
Does the C6D06065Q exhibit reverse recovery charge?
No, as a majority carrier device, the C6D06065Q has zero reverse recovery charge.
What is the maximum junction temperature for this component?
The maximum junction temperature is +175°C.
