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The C6D08065A is a 6th generation Silicon Carbide Schottky Barrier diode rated for 650 V repetitive peak reverse voltage and 30 A continuous forward current at 25°C. It features a TO-220-2 package with a maximum forward voltage of 1.50 V at 8 A and 25°C. The device exhibits zero reverse recovery charge, enabling temperature-independent switching behavior. Thermal resistance from junction to case is typically 1.62 °C/W, supporting operation within a -55°C to +175°C junction temperature range.
Verify the specific ordering suffix against official Wolfspeed documentation to confirm packing type and compliance status. Ensure that the component meets all applicable RoHS and REACH regulatory requirements relevant to your target market before finalizing procurement decisions.
Select this component for applications requiring high efficiency and reduced cooling needs compared to silicon solutions. Consider the thermal derating curves when designing for elevated case temperatures to maintain reliable continuous forward current ratings.
This discrete power device belongs to the Wolfspeed C6D series of Silicon Carbide Schottky Diodes. These components are designed to replace traditional silicon diodes in diverse power electronics systems, offering improved system costs through lower overall thermal management requirements.
The datasheet indicates direct drop-in replacement capability for current silicon diodes and other silicon carbide diodes. Verify pinout compatibility and thermal interface specifications when substituting legacy components.
No, as a majority carrier device, the C6D08065A has zero reverse recovery charge.
The maximum operating junction temperature is +175°C.