C6D08065G

Overview

The C6D08065G is a 6th Generation Silicon Carbide Schottky diode rated for 650 V repetitive peak reverse voltage and 8 A continuous forward current. It features a TO-263-2 package with a maximum junction temperature of +175 °C. Electrical characteristics include a typical forward voltage of 1.27 V at 8 A and 25 °C, and a maximum reverse leakage current of 2 µA at 650 V and 25 °C. The device exhibits zero reverse recovery charge and operates within a thermal resistance range of 1.62 °C/W from junction to case.

Feature Summary

• Low forward voltage drop with positive temperature coefficient
• Zero reverse recovery current and forward recovery voltage
• Temperature-independent switching behavior
• Low leakage current

Applications

• Industrial power supplies
• Switch mode power supplies
• Server/telecom power supplies
• Power factor correction
• Solar inverter
• Uninterruptible power supply

Procurement Notes

Verify the specific revision level against the datasheet before procurement, as Wolfspeed updates documentation periodically. Confirm compliance requirements such as RoHS and REACH status directly with the manufacturer or authorized distributor. Ensure the ordering suffix matches the required packaging format. Validate that the TO-263-2 package dimensions align with the target PCB layout constraints.

Selection Notes

Select this component for applications requiring high-frequency operation and reduced cooling requirements compared to silicon solutions. Consider the derating curves for continuous forward current based on the case temperature. Evaluate the total capacitive charge and stored energy parameters for high-voltage switching scenarios. Ensure the system design accommodates the specified non-repetitive peak forward surge current limits.

Part Context

This discrete SiC Schottky diode belongs to the 6th Generation product family from Wolfspeed. It is designed to replace traditional silicon-based rectifiers in power electronics systems. The technology enables higher efficiency standards and increased power densities. The device supports easy paralleling without concern for thermal runaway.

Replacement Considerations

Check for updated revisions of the C6D08065G part number. Verify compatibility with existing TO-263-2 footprints if substituting similar 650V SiC diodes. Ensure thermal management designs account for the specific junction-to-case thermal resistance values provided in the datasheet.