C6D10065A

Overview

The C6D10065A is a 6th Generation Silicon Carbide Schottky diode rated for 650 V DC blocking voltage and 10 A continuous forward current at 155 °C. It features a TO-220-2 package with a typical junction-to-case thermal resistance of 1.62 °C/W. The device exhibits a maximum forward voltage of 1.50 V at 10 A and 25 °C, with zero reverse recovery charge due to its majority carrier operation.

Feature Summary

• Low forward voltage drop with positive temperature coefficient
• Zero reverse recovery current and forward recovery voltage
• Temperature-independent switching behavior

Applications

• Industrial switched mode power supplies
• Uninterruptible and auxiliary power supplies
• Boost stages for PFC and DC-DC converters
• Solar inverters

Procurement Notes

Verify the specific revision level against the datasheet dated October 2024. Confirm RoHS compliance status via official Wolfspeed declarations. Ensure the TO-220-2 package marking matches the required specifications for your assembly process.

Selection Notes

Select this component for high-frequency applications requiring low conduction losses. Evaluate thermal management based on the 1.62 °C/W junction-to-case resistance. Consider paralleling multiple units if higher current capacity is needed without thermal runaway risks.

Part Context

This discrete SiC Schottky diode belongs to the 6th Generation product family. It is designed to replace silicon-based solutions in power electronics systems to achieve higher efficiency standards and improved power density.

Replacement Considerations

Cross-reference with other 650V SiC Schottky diodes from the same manufacturer family for potential pin-compatible alternatives.