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The C6D10065E is a silicon carbide Schottky diode rated for 650 V repetitive peak reverse voltage and 10 A continuous forward current at elevated temperatures. It utilizes Wolfspeed's sixth-generation technology to achieve low forward voltage drop, zero reverse recovery current, and zero forward recovery voltage. The device operates within a junction temperature range of -55 °C to +175 °C and features a positive temperature coefficient on forward voltage. Packaged in a TO-252-2 surface-mount configuration, it offers high thermal performance with a junction-to-case thermal resistance of 1.51 °C/W.
Verify the specific ordering suffix against the manufacturer datasheet to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS and REACH requirements by obtaining the latest declarations from Wolfspeed representatives. Confirm that the component meets all applicable safety standards and regulatory requirements for the intended end-use application before finalizing procurement.
Select this component for designs requiring high efficiency and reduced heat sink sizes due to its low forward voltage drop. The positive temperature coefficient allows for safe parallel operation without thermal runaway risks. Consider the TO-252-2 package dimensions and recommended solder pad layout during PCB design to ensure proper thermal dissipation and mechanical stability under operating conditions.
This part belongs to Wolfspeed's sixth-generation silicon carbide Schottky diode family. It is designed to replace traditional silicon rectifiers in high-frequency and high-temperature environments. The product line supports various industrial and commercial power conversion needs, offering improved system-level efficiency and increased power density compared to earlier generations or alternative materials.
Consult official Wolfspeed documentation for verified substitute part numbers. Cross-reference electrical parameters such as voltage rating, current capacity, and thermal characteristics when evaluating alternatives.
No, it is a majority carrier diode with zero reverse recovery charge.
The maximum operating junction temperature is +175 °C.