C6D10065G-TR

Overview

The C6D10065G is a 650 V, 10 A Silicon Carbide Schottky diode in a TO-263-2 package. It features a maximum repetitive peak reverse voltage of 650 V and a continuous forward current rating of 10 A at 155 °C case temperature. The device exhibits a typical forward voltage of 1.27 V at 10 A and 25 °C, with a maximum reverse current of 2 µA at 650 V and 25 °C. Thermal resistance from junction to case is 1.38 °C/W, supporting operation within a -55 °C to +175 °C junction temperature range.

Feature Summary

• Zero reverse recovery current and forward recovery voltage due to majority carrier operation
• Low forward voltage drop with a positive temperature coefficient for safe paralleling
• Temperature-independent switching behavior and low leakage current

Applications

• Industrial power supplies
• Switch mode power supplies
• Server/telecom power supplies
• Power factor correction
• Solar inverters
• Uninterruptible power supplies

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel configuration for automated assembly processes. Confirm that the component marking aligns with the datasheet specifications for the C6D10065G part number. Ensure compliance documentation, including RoHS declarations, is obtained directly from Wolfspeed representatives or official product documentation channels prior to integration.

Selection Notes

Select this component for designs requiring high-frequency operation and reduced cooling requirements compared to silicon solutions. Evaluate thermal management strategies based on the specified junction-to-case thermal resistance and power dissipation ratings. Consider the device's ability to be easily paralleled without thermal runaway concerns when scaling current capacity for higher power applications.

Part Context

This discrete Silicon Carbide Schottky diode belongs to the C6D series designed for industrial and commercial power electronics. It offers performance advantages over silicon-based solutions by enabling higher efficiency standards and increased power densities. The technology supports systems reaching higher operating frequencies while maintaining reliability in diverse application environments.

Replacement Considerations

Cross-reference pinout compatibility and thermal characteristics when substituting other TO-263-2 packaged SiC diodes. Verify that alternative devices meet the same 650 V blocking voltage and current handling requirements for direct replacement in existing circuit topologies.