C6D10065Q-TR

$4.54

Description：DIODE SIL CARBIDE 650V 39A 4QFN
Series：-
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1692fca01be8 Category: Single Diodes Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：DIODE SIL CARBIDE 650V 39A 4QFN
Series：-
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：650 V
Current - Average Rectified (Io)：39A
Voltage - Forward (Vf) (Max) @ If：1.5 V @ 10 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：50 µA @ 650 V
Capacitance @ Vr, F：611pF @ 0V, 1MHz
Mounting Type：Surface Mount
Package / Case：4-PowerVQFN
Supplier Device Package：4-QFN (8x8)
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

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C6D10065Q-TR

Overview

The C6D10065Q-TR is a 6th generation 650 V, 10 A Silicon Carbide Schottky diode in a QFN 8x8 package. It features a maximum forward voltage of 1.5 V at 25 °C and 1.6 V at 175 °C. The device has a continuous forward current rating of 41 A at 25 °C case temperature, dropping to 12 A at 155 °C. Non-repetitive peak surge current is 61 A at 25 °C. Thermal resistance from junction to case is typically 1.1 °C/W. Total capacitive charge is 34 nC at 400 V reverse bias.

Feature Summary

Low forward voltage drop with positive temperature coefficient
Zero reverse recovery current and forward recovery voltage
Temperature-independent switching behavior
Low profile package with low inductance

Applications

Enterprise power supplies
Server and telecom power supplies
Switched mode power supplies
Industrial power supplies
Boost power factor correction

Procurement Notes

Verify the specific ordering suffix '-TR' indicates tape and reel packaging when sourcing components. Confirm that the requested quantity aligns with standard reel sizes provided by distributors. Ensure compliance documentation such as RoHS and REACh declarations are available for regulatory requirements. Check datasheet revision history for any updates to thermal or electrical parameters before finalizing procurement specifications.

Selection Notes

Select this component for high-frequency applications requiring low conduction losses and zero reverse recovery charge. The QFN 8x8 package supports automated surface mount assembly and offers reduced footprint compared to traditional through-hole packages. Evaluate thermal management capabilities based on the specified junction-to-case thermal resistance and derating curves for expected operating temperatures.

Part Context

This discrete silicon carbide Schottky barrier diode belongs to Wolfspeed's 6th generation product line. It utilizes SiC technology to achieve higher efficiency standards than silicon-based solutions. The device allows for easy paralleling without thermal runaway concerns, supporting diverse power electronics designs.