C6D16065H

Overview

The Wolfspeed C6D16065H is a sixth-generation 650 V, 16 A Silicon Carbide Schottky Barrier diode housed in a TO-247-2 package. It features a maximum repetitive peak reverse voltage of 650 V and a continuous forward current rating of 16 A at a case temperature of 25 °C. The device exhibits a typical forward voltage of 1.3 V at 16 A and 25 °C, with a maximum junction-to-case thermal resistance of 1.09 °C/W. Operating within a junction temperature range of -55 °C to +175 °C, it provides zero reverse recovery charge and temperature-independent switching behavior.

Feature Summary

• Zero reverse recovery current and forward recovery voltage for ultra-fast switching operations
• Low forward voltage drop with a positive temperature coefficient
• Temperature-independent switching behavior
• Robust surge capability with high reverse-voltage blocking

Applications

• Industrial switched mode power supplies
• Uninterruptible and auxiliary power supplies
• Boost stages for Power Factor Correction (PFC) and DC-DC converters
• Solar inverters

Procurement Notes

Verify the specific ordering suffix and compliance documentation against the official datasheet before procurement. Confirm that the TO-247-2 package dimensions and mounting torque specifications align with your mechanical design requirements. Ensure that the thermal management solution accommodates the specified junction-to-case thermal resistance values under your intended operating conditions.

Selection Notes

Select this component when designing systems requiring high efficiency and reduced cooling requirements compared to silicon solutions. Consider its ability to be easily paralleled without thermal runaway concerns for higher current demands. Evaluate the positive temperature coefficient for stable current sharing in parallel configurations and ensure the application operates within the specified -55 °C to +175 °C junction temperature limits.

Part Context

This part belongs to Wolfspeed's sixth-generation 650 V Silicon Carbide Schottky diode family. These devices are designed to replace traditional silicon diodes, offering superior performance in terms of switching speed and conduction losses. The TO-247-2 package provides a robust mechanical structure suitable for industrial applications requiring high reliability and efficient heat dissipation.

Replacement Considerations

The datasheet notes that these SiC diodes can serve as direct drop-in replacements for certain silicon diodes and other silicon carbide diodes. Verify pinout compatibility and thermal interface requirements when substituting existing components in established designs.